Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures

IEEE Journal of the Electron Devices Society

Tarun Agarwal¹  Yashwanth Balaji¹  Cesar Javier Lockhart De La Rosa²  Dan Mocuta³  Daniele Chiappe³  Dennis H. C. Lin³  Cedric Huyghebaert³  Guido Groeseneken³  Quentin Smets³  Iuliana Radu³  Anh Khoa Augustin Lu⁴ 

[1] Department of Electrical Engineering, KU Leuven, Leuven, Belgium;Department of Metallurgy and Materials Engineering, KU Leuven, Leuven, Belgium;IMEC, Leuven, Belgium;Mathematics for Advanced Materials Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology, Sendai, Japan;

关键词: 2D materials;    TMD;    TFET;    band-to-band tunneling;    heterostructures;    Schottky contacts;   

DOI  :  10.1109/JEDS.2018.2815781

来源: DOAJ

【 摘 要 】

2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control. TMDs are especially well suited for tunneling field-effect transistors (TFETs) due to their low-dielectric constant and their promise of atomically sharp and self-passivated interfaces. Here, we experimentally demonstrate band-to-band tunneling (BTBT) in Van der Waals heterostructures formed by MoS₂ and MoTe₂. Density functional theory simulations of the band structure show our MoS₂-MoTe₂ heterojunctions have a staggered band alignment, which boosts BTBT compared to a homojunction configuration. Low-temperature measurements and electrostatic simulations provide understanding toward the role of Schottky contacts and the material thickness on device performance. Negative differential transconductance-based devices were also demonstrated using a different device architecture. This paper provides the prerequisites and challenges required to overcome at the contact region to achieve a steep subthreshold slope and high ON-currents with 2-D-based TFETs.

【 授权许可】

Unknown