Optimization of Line-Tunneling Type L-Shaped Tunnel Field-Effect-Transistor for Steep Subthreshold Slope

Electronics

Faraz Najam¹  YunSeop Yu¹ 

[1] Department of Electrical, Electronic and Control Engineering and IITC, Hankyong National University, Anseong 17579, Korea;

关键词: band-to-band tunneling;    L-shaped tunnel field-effect-transistor;    double-gate tunnel field-effect-transistor;    corner-effect;   

DOI  :  10.3390/electronics7110275

来源: DOAJ

【 摘 要 】

The L-shaped tunneling field-effect-transistor (LTFET) has been recently introduced to overcome the thermal subthreshold limit of conventional metal-oxide-semiconductor field-effect-transistors (MOSFET). In this work, the shortcomings of the LTFET was investigated. It was found that the corner effect present in the LTFET effectively degrades its subthreshold slope. To avoid the corner effect, a new type of device with dual material gates is presented. The new device, termed the dual-gate (DG) LTEFT (DG-LTFET), avoids the corner effect and results in a significantly improved subthreshold slope of less than 10 mV/dec, and an improved ON/OFF current ratio over the LTFET. The DG-LTFET was evaluated for different device parameters and bench-marked against the LTFET. This work presents the optimum configuration of the DG-LTFET in terms of device dimensions and doping levels to determine the best subthreshold, ON current, and ambipolar performance.

【 授权许可】

Unknown