F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application

Micromachines

Seunghyun Yun¹  Sangwan Kim¹  Jeongmin Oh¹  Seokjung Kang¹  Garam Kim²  JangHyun Kim³  Yoon Kim⁴ 

[1] Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Korea;Department of Electronic Engineering, Myongji University, Yongin 17058, Korea;Inter-university Semiconductor Research Center, Department of Electrical and with the Department of Computer Engineering, Seoul National University, Seoul 08826, Korea;School of Electrical and Computer Engineering, University of Seoul, Seoul 02504, Korea;

关键词: band-to-band tunneling;    tunnel field-effect transistor (tfet);    l-shaped tfet;    line tunneling;    electric field crowding;    corner effect;   

DOI  :  10.3390/mi10110760

来源: DOAJ

【 摘 要 】

In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage (V_ON) maintaining high on-state current (I_ON) and low subthreshold swing (SS) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower V_ON than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher I_ON and 7 mV/dec smaller average SS with the same V_ON as that for L-shaped TFET.

【 授权许可】

Unknown