Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors

Nanomaterials

Yossi Rosenwaks¹  Yonatan Vaknin¹  Ronen Dagan¹ 

[1] School of Electrical Engineering, Tel-Aviv University, Tel Aviv 69978, Israel;

关键词: Schottky barrier height;    image-force;    TMD;    KPFM;    2D materials;    FET;   

DOI  :  10.3390/nano10122346

来源: DOAJ

【 摘 要 】

Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (TMD)/metal interface of a field effect transistor. It is found that the barrier height at the gold/ single-layer molybdenum disulfide (MoS₂) interfaces decreases with increasing drain voltage, and this lowering reaches 0.5–1 V We also show that increase of the gate voltage induces additional barrier lowering.

【 授权许可】

Unknown