Structural and electrical properties of swift heavy ion beam irradiated Fe/Si interface

Bulletin of materials science

I P Jain¹  R K Jain¹  Chhagan Lal¹ 

[1] Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur 302 004, India$$Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur 302 004, IndiaCentre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur 302 004, India$$

关键词: Ion beam mixing;    XRD;    Schottky barrier height;    series resistance.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The present work deals with the mixing of iron and silicon by swift heavy ions in high-energy range. The thin film was deposited on a ð‘�??-Si (111) substrate at 10^-6 torr and at room temperature. Irradiations were undertaken at room temperature using 120 MeV Au⁺⁹ ions at the Fe/Si interface to investigate ion beam mixing at various doses: 5 Ã�? 10¹² and 5 Ã�? 10¹³ ions/cm². Formation of different phases of iron silicide has been investigated by X-ray diffraction (XRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation. 𝐼â€�?�ð�?��?? measurements for both pristine and irradiated samples have been carried out at room temperature, series resistance and barrier heights for both as deposited and irradiated samples were extracted. The barrier height was found to vary from 0.73â€�??0.54 eV. The series resistance varied from 102.04â€�??38.61 kð›�?.

【 授权许可】

Unknown