Mixing induced by swift heavy ion irradiation at Fe/Si interface

Bulletin of materials science

I P Jain¹  Veenu Sisodia¹ 

[1] Materials Science Laboratory, Centre for Non Conventional Energy Resources, University of Rajasthan, Jaipur 302 004, India$$Materials Science Laboratory, Centre for Non Conventional Energy Resources, University of Rajasthan, Jaipur 302 004, IndiaMaterials Science Laboratory, Centre for Non Conventional Energy Resources, University of Rajasthan, Jaipur 302 004, India$$

关键词: Ion beam mixing;    irradiation;    swift heavy ion.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The present work deals with the mixing of metal and silicon by swift heavy ions in high-energy range. Threshold value for the defect creation in metal Fe calculated was found to be ∼ 40 keV/nm. A thin film of Fe (10 nm) was deposited on Si (100) at a pressure of 4 Ã�? 10^-8 Torr and was irradiated with 95 MeV Au ions. Irradiation was done at RT, to a dose of 10¹³ ions/cm² and 1 pna current. The electronic energy loss was found to be 29.23 keV/nm for 95 MeV Au ions in Fe using TRIM calculation. Compositional analysis of samples was done by Rutherford backscattering spectroscopy. Reflectivity studies were carried out on the pre-annealed and post-annealed samples to study irradiation effects. Grazing incidence X-ray diffraction was done to study the interface. It was observed that ion beam mixing reactions at RT lead to mixing as a result of high electronic excitations.

【 授权许可】

Unknown