Temperature dependence of electrical properties in In/Cu$_2$ZnSnTe$_4$/Si/Ag diodes

Bulletin of Materials Science

Ö BAYRAKLI SÜRÜCÜ^3,4,5¹  H H GULLU^1²  D E YILDIZ^2³  M PARLAK^3,4⁴  M TERLEMEZOGLU^3,4,6⁵ 

[1] Center for Solar Energy Research and Applications (GÜNAM), Middle East Technical University, 06800 Ankara, Turkey^3;Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey^1;Department of Physics, Hitit University, 19030 Corum, Turkey^2;Department of Physics, Kirsehir Ahi Evran, 40100 Kırsehir, Turkey^5;Department of Physics, Middle East Technical University, 06800 Ankara, Turkey^4;Department of Physics, Tekirdag Namik Kemal University, 59030 Tekirdag, Turkey^6

关键词: Temperature dependence;    $I$–$V$ characteristics;    barrier inhomogeneity;    Gaussian distribution;    series resistance.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Cu$_2$ZnSnTe$_4$ (CZTTe) thin films with In metal contactwere deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The variation in electrical characteristics of the diode was analysed by carrying out current–voltage ($I$ –$V$) measurements in the temperature range of 220–360 K. The forward bias $I$–$V$ behaviour was modelled according to the thermionic emission (TE) theory to obtain main diode parameters. In addition, the experimental data were detailed by taking into account the presence of aninterfacial layer and possible dominant current transport mechanisms were studied under analysis of ideality factor, $n$. Strong effects of temperature were observed on zero-bias barrier height ($\Phi_{\rm B0}$) and n values due to barrier height inhomogeneity at the interface. The anomaly observed in the analysis of TE was modelled by Gaussian distribution (GD) of barrier heightswith 0.844 eV mean barrier height and 0.132 V standard deviation. According to the Tung’s theoretical approach, a linear correlation between $\Phi_{\rm B0}$ and $n$ cannot be satisfied, and thus the modified Richardson plot was used to determine Richardson constant ($A^∗$). As a result, $A^∗$ was calculated approximately as 120.6 A cm$^{−2}$ K$^{−2}$ very close to the theoretical value for n-Si. In addition, the effects of series resistance ($R_s$) by estimating from Cheng’s function and density of surface states ($N_{ss}$) by taking the bias dependence of effective barrier height, were discussed.

【 授权许可】

CC BY