PERFORMANCE OF LEAKAGE POWER MINIMIZATION TECHNIQUE FOR CMOS VLSI TECHNOLOGY

ICTACT Journal on Communication Technology

T. Tharaneeswaran¹  S. Ramasamy¹ 

[1] R.M.K Engineering College, India;

关键词: Leakage currents;    current comparator;    charge pump;    VLSI;    LPMT;   

DOI  :  

来源: DOAJ

【 摘 要 】

Leakage power of CMOS VLSI Technology is a great concern. To reduce leakage power in CMOS circuits, a Leakage Power Minimiza-tion Technique (LPMT) is implemented in this paper. Leakage cur-rents are monitored and compared. The Comparator kicks the charge pump to give body voltage (Vbody). Simulations of these circuits are done using TSMC 0.35µm technology with various operating temper-atures. Current steering Digital-to-Analog Converter (CSDAC) is used as test core to validate the idea. The Test core (eg.8-bit CSDAC) had power consumption of 347.63 mW. LPMT circuit alone consumes power of 6.3405 mW. This technique results in reduction of leakage power of 8-bit CSDAC by 5.51mW and increases the reliability of test core. Mentor Graphics ELDO and EZ-wave are used for simulations.

【 授权许可】

Unknown