Growth of crystalline phase change materials by physical deposition methods

Advances in Physics: X

Raffaella Calarco¹  Jos E. Boschker¹ 

[1] Paul-Drude-Institut für Festkörperelektronik;

关键词: Phase change materials;    Molecular beam epitaxy;    pulsed laser deposition;    sputtering;    epitaxy;    Ge2Sb2Te5;   

DOI  :  10.1080/23746149.2017.1346483

来源: DOAJ

【 摘 要 】

Phase change materials are a technologically important materials class and are used for data storage in rewritable DVDs and in phase change random access memory. Furthermore, new applications for phase change materials are emerging. Phase change materials with a high structural quality, such as offered by epitaxial films, are needed in order to study the fundamental properties of phase change materials and to improve our understanding of this materials class. Here, we review the progress made in the growth of crystalline phase change materials by physical methods, such as molecular beam epitaxy, sputtering, and pulsed laser deposition. First, we discuss the difference and similarities between these physical deposition methods and the crystal structures of Ge2Sb2Te5, the prototype phase change material. Next, we focus on the growth of epitiaxial GST films on (0 0 1)- and (1 1 1)-oriented substrates, leading to the conclusion that (1 1 1)-oriented substrates are preferred for the growth of phase change materials. Finally, the growth of GeTe/Sb2Te3 superlattices on amorphous and single crystalline substrates is discussed.

【 授权许可】

Unknown