Novel 3D Pixel Sensors for the Upgrade of the ATLAS Inner Tracker

Frontiers in Physics

Alessandro Lapertosa¹  Leonardo Vannoli¹  David Quirion²  Maria Manna²  Giulio Pellegrini²  Sabina Ronchin³  Maurizio Boscardin³  Francesco Ficorella³  Sebastian Grinstein⁴  Gian-Franco Dalla Betta⁵  Md. Arif Abdulla Samy⁵  Roberto Mendicino⁵  Simon Huiberts⁶  Magne Elk Lauritzen⁶  Bjarne Stugu⁶  Ole Dorholt⁷  Andreas Heggelund⁷  Ole Myren Rohne⁷  Heidi Sandaker⁷  Stefano Terzo⁸  Juan Carlotto⁸  Giulia Giannini⁸  Hideyuki Oide⁹  Claudia Gemme⁹  Giovanni Darbo⁹  Giuseppe Gariano⁹  Ozhan Koybasi^1,10  Marco Povoli^1,10  Angela Kok^1,10 

[1] 0Department of Physics, University of Genoa, Genoa, Italy;1Centre Nacional de Microelectrónica (CNM), Consejo Superior de Investigaciones Científicas (CSIC), Barcelona, Spain;Bruno Kessler Foundation (FBK), Trento, Italy;Catalan Institution for Research and Advanced Studies (ICREA), Barcelona, Spain;Department of Industrial Engineering, University of Trento, Trento, Italy;Department of Physics and Technology, University of Bergen, Bergen, Norway;Department of Physics, University of Oslo, Oslo, Norway;Institute for High Energy Physiscs (IFAE), Barcelona Institute of Science and Technology (BIST), Barcelona, Spain;National Institute of Nuclear Physics (INFN) of Genova, Genoa, Italy;SINTEF DIGITAL, Oslo, Norway;Trento Institute for Fundamental Physics and Applications (TIFPA), University of Trento, Trento, Italy;

关键词: solid state detectors;    radiation-hard charged-particle detectors;    3D silicon detectors;    tracking detectors;    ATLAS experiment;    high energy physics (HEP);   

DOI  :  10.3389/fphy.2021.624668

来源: DOAJ

【 摘 要 】

The ATLAS experiment will undergo a full replacement of its inner detector to face the challenges posed by the High Luminosity upgrade of the Large Hadron Collider (HL-LHC). The new Inner Tracker (ITk) will have to deal with extreme particle fluences. Due to its superior radiation hardness the 3D silicon sensor technology has been chosen to instrument the innermost pixel layer of ITk, which is the most exposed to radiation damage. Three foundries (CNM, FBK, and SINTEF), have developed and fabricated novel 3D pixel sensors to meet the specifications of the new ITk pixel detector. These are produced in a single-side technology on either Silicon On Insulator (SOI) or Silicon on Silicon (Si-on-Si) bonded wafers by etching both n- and p-type columns from the same side. With respect to previous generations of 3D sensors they feature thinner active substrates and smaller pixel cells of 50 × 50 and 25 × 100 µm2. This paper reviews the main design and technological issues of these novel 3D sensors, and presents their characterization before and after exposure to large radiation doses close to the one expected for the innermost layer of ITk. The performance of pixel modules, where the sensors are interconnected to the recently developed RD53A chip prototype for HL-LHC, has been investigated in the laboratory and at beam tests. The results of these measurements demonstrate the excellent radiation hardness of this new generation of 3D pixel sensors that enabled the project to proceed with the pre-production for the ITk tracker.

【 授权许可】

Unknown