A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device

Polymers

Ahmed.N. M. Alahmadi¹  KhasanS. Karimov² 

[1] Electrical Engineering Department, Umm-Al-Qura University, Makkah 21955, Saudi Arabia;Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan;

关键词: memory device;    organic semiconductors;    poly-N-epoxy-propylcarbazole;    tera-cyanoquino-dimethane;   

DOI  :  10.3390/polym13101594

来源: DOAJ

【 摘 要 】

Generally, polymer-based memory devices store information in a manner distinct from that of silicon-based memory devices. Conventional silicon memory devices store charges as either zero or one for digital information, whereas most polymers store charges by the switching of electrical resistance. For the first time, this study reports that the novel conducting polymer Poly-N-Epoxy-Propyl Carbazole (PEPC) can offer effective memory storage behavior. In the current research, the electrical characterization of a single layer memory device (metal/polymer/metal) using PEPC, with or without doping of charge transfer complexes 7,7,8,8-tetra-cyanoquino-dimethane (TCNQ), was investigated. From the current–voltage characteristics, it was found that PEPC shows memory switching effects in both cases (with or without the TCNQ complex). However, in the presence of TCNQ, the PEPC performs faster memory switching at relatively lower voltage and, therefore, a higher ON and OFF ratio (I_ON/I_OFF ~ 100) was observed. The outcome of this study may help to further understand the memory switching effects of conducting polymer.

【 授权许可】

Unknown