Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

Electronics

Ronald A. Coutu¹  Robert A. Lake¹  Eric R. Heller²  James P. Theimer³  Christopher A. Bozada³  Brian S. Poling³  Glen D. Via³  Stephen E. Tetlak³  Bradley D. Christiansen³  Ramakrishna Vetury⁴  Jeffrey B. Shealy⁴ 

[1]Air Force Institute of Technology, 2950 Hobson Way, Wright-Patterson Air Force Base, Dayton, OH 45433, USA

[2]Air Force Research Laboratory, Materials and Manufacturing Directorate, 2977 Hobson Way, Wright-Patterson Air Force Base, Dayton, OH 45433, USA

[3]Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, Dayton, OH 45433, USA

[4]Radio Frequency Micro Devices, Greensboro, NC 27401, USA

关键词: gallium nitride;    HEMT;    lifetime testing;    reliability;    device degradation;   

DOI  :  10.3390/electronics5030032

来源: DOAJ

【 摘 要 】

The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and baseplate temperature. We found that power or temperature alone could not explain difference in observed degradation, and that accelerated life tests employed by industry can benefit by considering the impact of accelerating factors besides temperature. Specifically, we found that the voltage used to reach a desired power dissipation is important, and also that temperature acceleration alone or voltage alone (without much power dissipation) is insufficient to assess lifetime at operating conditions.

【 授权许可】

Unknown