Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate

IEICE Electronics Express

Masami Tokumitsu¹  Tetsuya Suemitsu¹  Fabiana Rampazzo²  Yoshino K. Fukai¹  Enrico Zanoni²  Gaudenzio Meneghesso² 

[1]NTT Photonics Laboratories, NTT Corporation

[2]Department of Information Engineering, University of Padova

关键词: HEMT;    FET;    InP;    InGaAs;    reliability;    cutoff frequency;   

DOI  :  10.1587/elex.3.310

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(7)Cited-By(1)We report two-step-recess gate InP HEMTs with a new process option suitable for producing a wide recess. In the new devices the gate recess is completely covered with a passivation film. Though the gate recess is extremely wide, a transconductance of 1S/mm and a cutoff frequency of 208GHz are achieved with 100-nm gate devices. Moreover, a huge improvement in the drain reliability is achieved by the wide recess which reduces hot-carrier-induced degradation, and by the full passivation which eliminates the instability related to the recess surface.

【 授权许可】

Unknown