Vanadium Dioxide Circuits Emulate Neurological Disorders

Frontiers in Neuroscience

Supratik Guha²  Jianqiang Lin²  Shriram Ramanathan³ 

[1] Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, United States;Institute for Molecular Engineering, University of Chicago, Chicago, IL, United States;School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, United States;School of Materials Engineering, Purdue University, West Lafayette, IN, United States;

关键词: strongly correlated systems;    VO2;    central nervous system diseases;    Hodgkin-Huxley model;    artificial neurons;   

DOI  :  10.3389/fnins.2018.00856

来源: DOAJ

【 摘 要 】

Information in the central nervous system (CNS) is conducted via electrical signals known as action potentials and is encoded in time. Several neurological disorders including depression, Attention Deficit Hyperactivity Disorder (ADHD), originate in faulty brain signaling frequencies. Here, we present a Hodgkin-Huxley model analog for a strongly correlated VO2 artificial neuron system that undergoes an electrically-driven insulator-metal transition. We demonstrate that tuning of the insulating phase resistance in VO2 threshold switch circuits can enable direct mimicry of neuronal origins of disorders in the CNS. The results introduce use of circuits based on quantum materials as complementary to model animal studies for neuroscience, especially when precise measurements of local electrical properties or competing parallel paths for conduction in complex neural circuits can be a challenge to identify onset of breakdown or diagnose early symptoms of disease.

【 授权许可】

Unknown