Angular dependent magnetoresistance in organic spin valves

Results in Physics

Wenjie Hu¹  Mei Fang²  Hao Li³  Wenchao Zhang³  Wang Guo³  Junliang Yang³  Fang Liu³  Huayan Xia³  Sangjian Zhang³  Tianli Li³  Jian Shen⁴  Tian Miao⁴  Yongli Gao⁴ 

[1] Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China;Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, USA;Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, PR China;State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433 Shanghai, PR China;

关键词: Organic spin valve;    Magnetoresistance;    Angular dependence;    Magnetization;    Domain-switch;   

DOI  :  

来源: DOAJ

【 摘 要 】

Vertical organic spin valve (OSV)-based organic spintronic devices with additional degree of freedom to utilize and control the magnetoresistance (MR) by spin of electrons, have attracted a lot of interests for both foundation science and future functional device applications. Herein the effects of temperature, bias voltage and direction of magnetic field on the MR of the OSV are investigated to disclose the mechanisms. Specifically, the MR shows angular dependence with the value tuned from negative to positive by rotating the field direction from in-plane to out-of-plane, corresponding to the angular dependent spin moment. A domain-switch model is proposed to simulate the resistance changes in OSV device. The research provides a new route to tune the MR in organic spintronic devices, which is significant for future functional device applications.

【 授权许可】

Unknown