Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

Crystals

Paul K. Hurley¹  Anya Curran¹  Enrica Mura¹  Agnieszka Gocalinska¹  Ian M. Povey¹  Roger E. Nagle¹  Andrea Pescaglini¹  Emanuele Pelucchi¹  Farzan Gity¹  Brendan Sheehan¹  Eleonora Secco¹  Kevin Thomas¹  Colm O’Dwyer¹ 

[1] Tyndall National Institute, Dyke Parade, T12 R5CP Cork, Ireland;

关键词: polycrystalline;    InAs;    thin films;   

DOI  :  10.3390/cryst11020160

来源: DOAJ

【 摘 要 】

Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the films are reported, with electron mobilities of ~100 cm²/V·s achieved at room temperature, and values reaching 155 cm²/V·s for a heterostructure including the polycrystalline InAs film. Test structures fabricated with an aluminum oxide (Al₂O₃) top-gate dielectric show that transistor-type behavior is possible when poly InAs films are implemented as the channel material, with maximum I_ON/I_OFF > 250 achieved at −50 °C and I_ON/I_OFF = 90 at room temperature. Factors limiting the I_ON/I_OFF ratio are investigated and recommendations are made for future implementation of this material.

【 授权许可】

Unknown