Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

IEEE Journal of the Electron Devices Society

Jhih-Yuan Yang¹  Dai-Jie Lin¹  Chih-Kang Chang¹  Jian-Jang Huang¹ 

[1] Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan;

关键词: GaN;    high-electron mobility transistors (HEMTs);    dual-gate structure;    current collapse;   

DOI  :  10.1109/JEDS.2021.3132429

来源: DOAJ

【 摘 要 】

Surface traps on GaN-based HEMTs (high-electron-mobility transistors) usually result in the increase of channel on-resistance. It becomes worsen when short pulses are applied during high-frequency and high voltage switching. Here we present a dual-gate transistor structure to suppress the dynamic on-resistance increase. The auxiliary gate under a proper fixed voltage is able to induce additional electrons to compensate the channel carrier loss during main gate switching, leading to a lower dynamic on-resistance. In this work, we benchmarked the fundamental electrical properties of both single-gate and dual-gate HEMTs. We further extracted the dynamic electrical properties by stressing the devices with short pulses. The results suggest a significant mitigation of current collapse of a dual-gate HEMT under a proper bias applied on the auxiliary gate electrode. The physical mechanism based on the charge distribution in the channel is employed to explain the observations.

【 授权许可】

Unknown