Organic Thin Film Transistors With Multi-Finger Contacts as Voltage Amplifiers

IEEE Access

Afra Al Ruzaiqi¹  Helena Gleskova¹  Amayikai A. Ishaku¹ 

[1] Department of Electronic and Electrical Engineering, University of Strathclyde, Glasgow, U.K.;

关键词: Amplifiers;    analog circuits;    organic thin film transistors;    sensors;   

DOI  :  10.1109/ACCESS.2018.2863043

来源: DOAJ

【 摘 要 】

Low-voltage p-type organic transistors with two types of multi-finger source/drain contacts were fabricated on glass and polyethylene naphthalate. They exhibited threshold voltage between -0.3 and -0.5V and field-effect mobility between 0.2 and 0.4 cm²/V·s. Their transconductance in saturation operation varied from ~25 to ~60 μS and scaled with the gate dielectric capacitance and transistor dimensions. All transistors operated beyond 1 kHz, while the transistors with the shortest channel length (L = 20 μm and W = 4.03 mm) exhibited a cutoff frequency of 13.4 kHz. The transistors were used to build simple voltage amplifiers by adding a resistor R_d on the drain side of the transistor. Higher R_d required higher supply voltage V_dd but resulted in the increased voltage gain. A voltage gain in excess of 8 V/V was obtained for V_dd of -12 V and R_d of 220 kΩ when transistor with medium value of transconductance of 37 μS was used. Consequently, the voltage gain of 10 V/V is achievable, making such transistor structures viable for sensor development.

【 授权许可】

Unknown