Processing and performance of organic insulators as a gate layer in organic thin film transistors fabricated on polyethylene terephthalate substrate

Bulletin of materials science

Monica Katiyar¹  Saumen Mandal¹ 

[1] Department of Materials Science and Engineering, Samtel Centre for Display Technologies, Indian Institute of Technology, Kanpur 208 016, India$$Department of Materials Science and Engineering, Samtel Centre for Display Technologies, Indian Institute of Technology, Kanpur 208 016, IndiaDepartment of Materials Science and Engineering, Samtel Centre for Display Technologies, Indian Institute of Technology, Kanpur 208 016, India$$

关键词: Organic dielectric;    organic thin film transistors;    polyethylene terephthalate substrate;    surface energy;    roughness.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Fabrication of organic thin film transistor (OTFT) on flexible substrates is a challenge, because of its low softening temperature, high roughness and flexible nature. Although several organic dielectrics have been used as gate insulator, it is difficult to choose one in absence of a comparative study covering processing of dielectric layer on polyethylene terephthalate (PET), characterization of dielectric property, pentacene film morphology and OTFT characterization. Here, we present the processing and performance of three organic dielectrics, poly(4-vinylphenol) (PVPh), polyvinyl alcohol (PVA) and poly(methylmethacrylate) (PMMA), as a gate layer in pentacene-based organic thin film transistor on PET substrate. We have used thermogravimetric analysis of organic dielectric solution to determine annealing temperature for spin-coated films of these dielectrics. Comparison of the leakage currents for the three dielectrics shows PVA exhibiting lowest leakage (in the voltage range of �?30 to +30 V). This is partly because solvent is completely eliminated in the case of PVA as observed by differential thermogravimetric analysis (DTGA). We propose that DTGA can be a useful tool to optimize processing of dielectric layers. From organic thin film transistor point of view, crystal structure, morphology and surface roughness of pentacene film on all the dielectric layers were studied using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM).We observe pyramidal pentacene on PVPh whereas commonly observed dendritic pentacene on PMMA and PVA surface. Pentacene morphology development is discussed in terms of surface roughness, surface energy and molecular nature of the dielectric layer.

【 授权许可】

Unknown