A Comparative Study of the Gas Sensing Behavior in P3HT- and PBTTT-Based OTFTs: The Influence of Film Morphology and Contact Electrode Position

Sensors

Kyriaki Manoli²  Liviu Mihai Dumitru²  Mohammad Yusuf Mulla²  Maria Magliulo²  Cinzia Di Franco¹  Maria Vittoria Santacroce¹  Gaetano Scamarcio¹ 

[1] CNR-IFN and Dipartimento Interateneo di Fisica, Università degli Studi di Bari “A. Moro”-Via Orabona 4, 70126 Bari, Italy; E-Mails:;Dipartimento di Chimica Università degli Studi di Bari Aldo Moro, Via Orabona 4, 70126 Bari, Italy; E-Mails:

关键词: organic thin film transistors;    chemical sensors;    volatile organic compounds;   

DOI  :  10.3390/s140916869

来源: mdpi

【 摘 要 】

Bottom- and top-contact organic thin film transistors (OTFTs) were fabricated, using poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C16) as p-type channel semiconductors. Four different types of OTFTs were fabricated and investigated as gas sensors against three volatile organic compounds, with different associated dipole moments. The OTFT-based sensor responses were evaluated with static and transient current measurements. A comparison between the different architectures and the relative organic semiconductor was made.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.