Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit

IEEE Photonics Journal

Johan Gustavsson¹  Gunther Roelkens¹  Jorgen Bengtsson¹  Sulakshna Kumari²  Emanuel P. Haglund³  Anders Larsson³  Roel Baets³ 

[1] Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, G&x00F6;Photonics Research Group, imec, Ghent University, Ghent, Belgium;teborg, Sweden;

关键词: Waveguide;    gratings;    silicon nanophotonics;    semiconductor lasers.;   

DOI  :  10.1109/JPHOT.2017.2717380

来源: DOAJ

【 摘 要 】

A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated laser to both set the polarization state of the resonant optical field and to enable output coupling to a SiN waveguide with high efficiency. The numerical simulations predict that for apertures of 4 and 6-μm oxide-confined VCSILs operating at 845-nm wavelength, a slope efficiency for the light coupled to the waveguide of 0.18 and 0.22 mW/mA is achievable, respectively, while maintaining a low threshold gain of 583 and 589 cm^-1, respectively, for the lasing.

【 授权许可】

Unknown