The Road to a Robust and Affordable SiC Power MOSFET Technology

Energies

Suvendu Nayak¹  Minseok Kang²  Susanna Yu²  Shengnan Zhu²  Limeng Shi²  Anant K. Agarwal²  Diang Xing²  Marvin H. White²  Tianshi Liu²  Hema Lata Rao Maddi² 

[1] Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India;Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA;

关键词: SiC MOSFET;    threshold voltage;    oxide reliability;    body diode;    short circuit withstand time;   

DOI  :  10.3390/en14248283

来源: DOAJ

【 摘 要 】

This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold voltage under positive and negative gate bias, long-term reliability of gate oxide, screening of devices with extrinsic defects by means of gate voltage, body diode degradation, and short circuit withstand time are investigated through testing of commercial devices from different vendors and two-dimensional simulations. Price roadmap and foundry models of SiC MOSFETs are discussed. Future development of mixed-mode CMOS circuits with high voltage lateral MOSFETs along with 4−6× higher power handling capability compared to silicon circuits has been described.

【 授权许可】

Unknown