A study on the self turn-on phenomenon of power MOSFET induced by the turn-off operation of body diodes

IEICE Electronics Express

Tsuyoshi Funaki¹ 

[1] Osaka University, Div. of Electrical, Electronic and Information Eng. Graduate School of Engineering

关键词: self turn-on;    gate voltage fluctuation;    power MOSFET;    body diode;   

DOI  :  10.1587/elex.11.20140350

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(7)Cited-By(1)SiC power devices generally operate with fast switching. The fast switching operation in power conversion circuits suffer from the self turn-on phenomenon of a power MOSFET in which the gate voltage is induced to fluctuate by the turn-on operation of the MOSFET on the other side in the bridge circuit. The self turn-on results in a large power loss, when the fluctuating gate voltage exceeds the threshold gate voltage. This paper analytically discusses the self turn-on phenomenon of the MOSFET related to the turn-off operation of its body diode, which is initiated by the turn-on operation of the MOSFET on the other side in the bridge. This analysis was evaluated experimentally.

【 授权许可】

Unknown