Toward the Ultimate-High-Speed Image Sensor: From 10 ns to 50 ps

Sensors

VuTruong Son Dao¹  AnhQuang Nguyen²  Kohsei Takehara³  Kazuhiro Shimonomura⁴  TakeharuGoji Etoh⁴ 

[1] Department of Industrial and Systems Engineering, International University, Vietnam National University HCMC, Quarter 6, Linh Trung Ward, Thu Duc District, Ho Chi Minh City 720400, Vietnam;School of Electronics and Telecommunications, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi 100000, Vietnam;School of Science and Engineering, Kindai University, 3-4-1 Kowakae, Higashiosaka City, Osaka 577-8502, Japan;School of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan;

关键词: image sensor;    high-speed;    multi-collection-gate;    backside-illuminated;    BSI;    MCG;   

DOI  :  10.3390/s18082407

来源: DOAJ

【 摘 要 】

The paper summarizes the evolution of the Backside-Illuminated Multi-Collection-Gate (BSI MCG) image sensors from the proposed fundamental structure to the development of a practical ultimate-high-speed silicon image sensor. A test chip of the BSI MCG image sensor achieves the temporal resolution of 10 ns. The authors have derived the expression of the temporal resolution limit of photoelectron conversion layers. For silicon image sensors, the limit is 11.1 ps. By considering the theoretical derivation, a high-speed image sensor designed can achieve the frame rate close to the theoretical limit. However, some of the conditions conflict with performance indices other than the frame rate, such as sensitivity and crosstalk. After adjusting these trade-offs, a simple pixel model of the image sensor is designed and evaluated by simulations. The results reveal that the sensor can achieve a temporal resolution of 50 ps with the existing technology.

【 授权许可】

Unknown