Toward One Giga Frames per Second — Evolution of in Situ Storage Image Sensors

Sensors

Takeharu G. Etoh¹  V. T. Son Dao¹  Tetsuo Yamada² 

[1] Research Organization of Science and Technology, Ritsumeikan University, Noji-Higashi 1-1-1, Kusatsu 525-8577, Japan; E-Mail:;Faculty of Engineering, Tokyo Polytechnic University, Iiyama 1583, Atsugi 243-0297, Japan; E-Mail:

关键词: imaging device;    high-speed;    image sensor;    BSI;    ISIS;    ISAS;   

DOI  :  10.3390/s130404640

来源: mdpi

【 摘 要 】

The ISIS is an ultra-fast image sensor with in-pixel storage. The evolution of the ISIS in the past and in the near future is reviewed and forecasted. To cover the storage area with a light shield, the conventional frontside illuminated ISIS has a limited fill factor. To achieve higher sensitivity, a BSI ISIS was developed. To avoid direct intrusion of light and migration of signal electrons to the storage area on the frontside, a cross-sectional sensor structure with thick pnpn layers was developed, and named “Tetratified structure”. By folding and looping in-pixel storage CCDs, an image signal accumulation sensor, ISAS, is proposed. The ISAS has a new function, the in-pixel signal accumulation, in addition to the ultra-high-speed imaging. To achieve much higher frame rate, a multi-collection-gate (MCG) BSI image sensor architecture is proposed. The photoreceptive area forms a honeycomb-like shape. Performance of a hexagonal CCD-type MCG BSI sensor is examined by simulations. The highest frame rate is theoretically more than 1Gfps. For the near future, a stacked hybrid CCD/CMOS MCG image sensor seems most promising. The associated problems are discussed. A fine TSV process is the key technology to realize the structure.

【 授权许可】

CC BY   
© 2013 by the authors; licensee MDPI, Basel, Switzerland.