Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au Passivation

IEEE Journal of the Electron Devices Society

Han-Wen Hu¹  Po-Chih Chen¹  Kuan-Neng Chen¹  Tzu-Chieh Chou¹  Demin Liu¹ 

[1] Department of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan;

关键词: 3D integration;    Cu bonding;    wafer-level bonding;    flip-chip bonding;    Au passivation;   

DOI  :  10.1109/JEDS.2021.3114648

来源: DOAJ

【 摘 要 】

Fine pitch Cu/SiO₂ hybrid bonding has been successfully demonstrated at a low temperature of 120 °C, a breakthrough, using Au passivation method in this work. To explore the bonding mechanism of passivation structures for hybrid bonding in details, Cu-Cu direct bonding with Au passivation on both wafer-level and chip-level has been discussed, including analyses of AFM, SAT, TEM, electrical measurements, and reliability test. Cu/SiO₂ hybrid bonding with the fine pitch structure with stable electrical performance can be achieved at low bonding temperature under an atmospheric environment. Accordingly, this Au passivation scheme for Cu/SiO₂ hybrid bonding with excellent bonding quality, low thermal budget, and high reliability shows a great feasibility for the 3D IC and heterogenous integration applications.

【 授权许可】

Unknown