Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation

IEEE Access

Ahmed Iskanderani¹  Md. Tanvir Hasan²  Ibrahim M. Mehedi²  Md. Rafiqul Islam³  Muhammad Shaffatul Islam⁴  Md. Soyaeb Hasan⁵ 

[1] Technology (KUET), Khulna, Bangladesh;Department of Electrical and Computer Engineering (ECE), King Abdulaziz University, Jeddah, Saudi Arabia;Department of Electrical and Electronic Engineering (EEE), Khulna University of Engineering &x0026;Department of Electrical and Electronic Engineering (EEE), World University of Bangladesh (WUB), Dhaka, Bangladesh;Department of Electrical, Electronic and Communication Engineering (EECE), Military Institute of Science and Technology, Dhaka, Bangladesh;

关键词: GaAs;    GaSb;    double gate;    junctionless MOSFETs;    nano-scaled device;    short-channel effects (SCEs);   

DOI  :  10.1109/ACCESS.2021.3106141

来源: DOAJ

【 摘 要 】

In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been studied for high-performance switching applications. The quantum transmitting boundary method (QTBM) has been considered for electron transport, and the band structures are accounted for sp3d5s* tight-binding modeling. The channel thickness, t_ch is varied from 1.7 to 4.7 nm to evaluate the device figure of merits (FOMs). The thinner channel’s device shows a lower OFF-state current, while the ticker channel device allows a higher ON-state current. The threshold voltage is approximately 0.4 V for GaAs DG-JLMOSFETs with t_ch = 1.7 nm, whereas it reduces to ~0.05 V for that of t_ch = 4.7 nm. Similar characteristics have been shown in GaSb devices. Besides, a significant impact of t_ch on the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) is found in GaSb DG-JLMOSFETs compared with those of GaAs devices. The devices show a higher leakage-power dissipation in both channel materials and low-intrinsic delay for thicker t_ch due to a substantial amount of energy drop. The above results indicate that III-V-based DG-JLMOSFETs are very promising for next-generation high-performance switching technology.

【 授权许可】

Unknown