Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process

Sensors

Jian-Zhi Tseng¹  Ching-Liang Dai¹  Chyan-Chyi Wu² 

[1] Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402, Taiwan;Department of Mechanical and Electro-Mechanical Engineering, Tamkang University, Tamsui,251, Taiwan;

关键词: magnetic sensor;    magneto-transistor;    CMOS;   

DOI  :  10.3390/s140406722

来源: DOAJ

【 摘 要 】

The modeling and fabrication of a magnetic microsensor based on amagneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 mm complementary metal oxide semiconductor (CMOS) process without anypost-process. The finite element method (FEM) software Sentaurus TCAD is utilized to analyze the electrical properties and carriers motion path of the magneto-transistor. A readout circuit is used to amplify the voltage difference of the bases into the output voltage. Experiments show that the sensitivity of the magnetic sensor is 354 mV/T at the supply current of 4 mA.

【 授权许可】

Unknown