Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process

Sensors

Jian-Zhi Tseng²  Chyan-Chyi Wu¹ 

[1] Department of Mechanical and Electro-Mechanical Engineering, Tamkang University, Tamsui, 251 Taiwan; E-Mail:;Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402 Taiwan; E-Mail:

关键词: magnetic sensor;    magneto-transistor;    CMOS;   

DOI  :  10.3390/s140406722

来源: mdpi

【 摘 要 】

The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process without any post-process. The finite element method (FEM) software Sentaurus TCAD is utilized to analyze the electrical properties and carriers motion path of the magneto-transistor. A readout circuit is used to amplify the voltage difference of the bases into the output voltage. Experiments show that the sensitivity of the magnetic sensor is 354 mV/T at the supply current of 4 mA.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.