Transition from freestanding SnO2 nanowires to laterally aligned nanowires with a simulation-based experimental design

Beilstein Journal of Nanotechnology

Sebastian Gutsch¹  Jasmin-Clara Bürger¹  Margit Zacharias¹ 

[1] Laboratory for Nanotechnology, Department of Microsystems Engineering (IMTEK), University of Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany;

关键词: finite element method simulation;    laterally aligned nanowires;    planar growth;    tin oxide;    vapor–liquid–solid nanowire growth;   

DOI  :  10.3762/bjnano.11.69

来源: DOAJ

【 摘 要 】

In this study, we used simulations as a guide for experiments in order to switch freestanding nanowire growth to a laterally aligned growth mode. By means of finite element simulations, we determined that a higher volumetric flow and a reduced process pressure will result in a preferred laterally aligned nanowire growth. Furthermore, increasing the volumetric flow leads to a higher species dilution. Based on our numerical results, we were able to successfully grow laterally aligned SnO2 nanowires out of gold film edges and gold nanoparticles on a-plane sapphire substrates. In our experiments a horizontal 2-zone tube furnace was used. The generation of Sn gas was achieved by a carbothermal reduction of SnO2 powder. However, we observed no elongation of the nanowire length with an increase of the process time. Nevertheless, an alternating gas exchange between an inert gas (Ar) and an oxygen-containing process atmosphere yielded an elongation of the laterally aligned nanowires, indicating that the nanowire growth takes place in a transient period of the gas exchange.

【 授权许可】

Unknown