Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon

Proceedings

James Muganda¹  Marta Kluba²  Ronald Dekker²  Ronald Stoute³  Aslihan Arslan⁴ 

[1] Department of Mechanical Engineering, TU Eindhoven, Eindhoven, The Netherlands;Department of Microfabrication, Group: ECTM, TU Delft, Delft, The Netherlands;Holst Centre, Eindhoven, The Netherlands;Philips Healthcare, Best, The Netherlands;

关键词: embedded microchannel;    HAR;    mesh mask;    single-step DRIE (Bosch process);   

DOI  :  10.3390/proceedings1040291

来源: DOAJ

【 摘 要 】

This paper presents a new method for the CMOS compatible fabrication of microchannels integrated into a silicon substrate. In a single-step DRIE process (Deep Reactive Ion Etching) a network of microchannels with High Aspect Ratio (HAR) up to 10, can be etched in a silicon substrate through a mesh mask. In the same single etching step, multidimensional microchannels with various dimensions (width, length, and depth) can be obtained by tuning the process and design parameters. These fully embedded structures enable further wafer processing and integration of electronic components like sensors and actuators in wafers with microchannels.

【 授权许可】

Unknown