Graphene/SrTiO3 hetero interface studied by X-ray photoelectron spectroscopy

Progress in Natural Science: Materials International

S. Shah Zaman¹  Rizwan Akram²  S. Karamat³  A. Oral³  U.Y. Inkaya³  Ilker Yildiz³  C. Ke⁴ 

[1] COMSATS Institute of Information Technology, Islamabad 54000, Pakistan;Department of Electrical Engineering, College of Engineering, Qassim University, Saudi Arabia;Department of Physics, Middle East Technical University, Ankara 06800, Turkey;Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore;

关键词: Chemical vapour deposition;    X-ray photoelectron spectroscopy;    Raman spectroscopy;    Graphene;    Valence band maximum;   

DOI  :  10.1016/j.pnsc.2016.06.010

来源: DOAJ

【 摘 要 】

The present paper focuses on study of graphene and strontium titanate (SrTiO3 or STO) interface. An ambient pressure chemical vapour deposition (AP-CVD) setup is used to grow graphene on STO (110) substrates in the presence of methane, argon and hydrogen gases at 1000 °C for 4 h. Raman spectroscopy measurements confirm the presence of graphene on STO substrates due to the existence of typical D and G peaks referring to graphene. These characteristic peaks are missing in the spectrum for bare substrates. X-ray photoelectron spectroscopy (XPS) is carried out for elemental analysis of samples, and study their bonding with STO substrates. We employed the valence band spectrum to calculate the valence band offset (VBO) and conduction band offset (CBO) at the G-STO interface. Also, we present an energy band diagram for Bi-layer and ABC (arranging pattern of carbon layers) stacked graphene layers.

【 授权许可】

Unknown