Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer

Results in Physics

Yue Hao¹  Chunfu Zhang²  Zhenfang Liang²  Jinfeng Zhang³  Zeyang Ren³  Kai Su³  Jincheng Zhang³  Yufei Xing³ 

[1] Corresponding author.;Xidian-Wuhu Research Institute, Wuhu 241002, China;State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China;

关键词: Diamond;    Normally-off;    MoO3;    MESFET;    High temperature;   

DOI  :  

来源: DOAJ

【 摘 要 】

The normally-off hydrogen-terminated diamond metal–semiconductor field effect transistors (MESFETs) with a MoO3 passivation layer were fabricated on the CVD grown polycrystalline diamond substrate. The characteristics of the device at room temperature and 100 °C, 150 °C and 200 °C were investigated. The device with a 2-μm gate shows a threshold voltage of −0.38 V, the maximum output current of 35 mA/mm and the transconductance of 17.4 mS/mm. The device can still work normally until 150 °C, which shows great potential to be used in high temperature in the future.

【 授权许可】

Unknown