期刊论文详细信息
IEICE Electronics Express | |
Global modeling of microwave three terminal active devices using the FDTD method | |
M. Essaaidi1  M'hamed Drissi1  O. El. Mrabet1  | |
[1] Electronics & Microwaves Group Faculty of Sciences, Abdelmalek Essaadi University | |
关键词: Active devices; amplifier; FDTD method; global modeling; MESFET; | |
DOI : 10.1587/elex.2.43 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(9)This paper presents a new approach for the global electromagnetic analysis of the three-Terminal active linear and nonlinear microwave circuits using the Finite-Difference Time Domain (FDTD) Method. Here, we have updated the both electric field components on the three - terminal active device by correlating the voltage and current with its impedance. This approach is applied to the analysis of a linear amplifier which includes a three-terminal active MESFET device. Simulations results are in good agreement with those of the commercial tool.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300547661ZK.pdf | 210KB | download |