Global modeling of microwave three terminal active devices using the FDTD method

IEICE Electronics Express

M. Essaaidi¹  M'hamed Drissi¹  O. El. Mrabet¹ 

[1] Electronics & Microwaves Group Faculty of Sciences, Abdelmalek Essaadi University

关键词: Active devices;    amplifier;    FDTD method;    global modeling;    MESFET;   

DOI  :  10.1587/elex.2.43

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(9)This paper presents a new approach for the global electromagnetic analysis of the three-Terminal active linear and nonlinear microwave circuits using the Finite-Difference Time Domain (FDTD) Method. Here, we have updated the both electric field components on the three - terminal active device by correlating the voltage and current with its impedance. This approach is applied to the analysis of a linear amplifier which includes a three-terminal active MESFET device. Simulations results are in good agreement with those of the commercial tool.

【 授权许可】

Unknown