Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy

IEICE Electronics Express

Hajime Sasaki²  Yoshikazu Terai¹  Takayuki Hisaka²  Kaoru Kadoiwa²  Yasufumi Fujiwara¹ 

[1] Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University;High Frequency & Optical Device Works, Mitsubishi Electric Corporation

关键词: reliability;    photoreflectance;    Franz-Keldysh oscillation;    humidity;    MESFET;   

DOI  :  10.1587/elex.9.1592

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(9)We investigated the changes in the electrical properties of a SiN/GaAs interface under high-temperature and high-humidity conditions, using photoreflectance (PR) spectroscopy and the electrical device characteristics. The PR spectra show the Franz-Keldysh oscillation (FKO); these spectra show that the period decreases after the sample is exposed to humidity. The electric field strength obtained from the FKO period indicates that the initial high electric field decreases with humidity exposure. Decomposed water molecules are supposed to diffuse into the SiN layer and react with the SiN/GaAs interface, causing a decrease in the interface states.

【 授权许可】

Unknown