GaAs/AlGaAs-Based 870-nm-Band Widely Tunable Edge-Emitting V-Cavity Laser

IEEE Photonics Journal

Haoyu Deng¹  Jian-Jun He¹  Wenxiong Wei¹ 

[1] State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering, Zhejiang University, Hangzhou, China;

关键词: Widely tunable semiconductor laser;    V-cavity laser;    GaAs/AlGaAs;   

DOI  :  10.1109/JPHOT.2013.2281616

来源: DOAJ

【 摘 要 】

An 870-nm-band wavelength tunable edge-emitting semiconductor laser based on V-coupled cavities in a GaAs/AlGaAs material system is presented. It does not involve any grating or epitaxial regrowth. Using a single electrode control, 31-channel wavelength tuning with a channel spacing of about 0.38 nm is achieved, with a tuning range of 11.4 nm. By additionally varying the temperature from 8°C to 50°C, wavelength tuning of 60 channels over 22.4 nm is demonstrated. At lower tuning current and with a temperature variation of 18°C, wavelength switching by carrier plasma effect is achieved with a tuning range of 8.2 nm. The simple and compact 870-nm-band edge-emitting tunable laser is suitable for multifunctional photonic integration for optical interconnect and biomedical applications.

【 授权许可】

Unknown