Evolution of the frequency-dependent polarization-angle phase-shift in the microwave radiation-induced magnetoresistance oscillations

33rd International Conference on the Physics of Semiconductors

Liu, Han-Chun^1 ; Samaraweera, Rasanga L.^1 ; Reichl, C.^2 ; Wegscheider, W.^2 ; Mani, R.G.^1

Department of Physics and Astronomy, Georgia State University, Atlanta

GA

30303, United States^1

Laboratorium für Festkörperphysik, ETH Zürich, Zürich

CH-8093, Switzerland^2

关键词: Frequency dependent polarization;    GaAs/AlGaAs;    GHz band;    Linear polarization;    Polarization orientation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012056/pdf
DOI  :  10.1088/1742-6596/864/1/012056

来源: IOP

【 摘 要 】

We report the evolution of the phase shift, θ0, extracted from traces of the diagonal resistance, RXX, vs. the linear polarization angle, θ, at oscillatory extrema of the microwave radiation induced magnetoresistance oscillations over the 36 ≤ f ≤ 40 GHz band in GaAs/AlGaAs system. A reference phase shift for the linear polarization angle in the vicinity of the specimen is obtained with the help of a sensitive carbon resistor. We fit an empirical cosine square law to the sinusoidal responses of RXXvs. θ to extract the phase shift θ0. The quasi-continuous variation θ0vs. f trace suggests a preferable polarization orientation for the specimen, and the f- and B- independence of overall average of θ0.