Behaviour of Bichromatic Microwave Induced Magnetoresistance Oscillations in the High Mobility GaAs/AlGaAs 2D electron System

33rd International Conference on the Physics of Semiconductors

Gunawardana, Binuka^1 ; Liu, Han-Chun^1 ; Samaraweera, Rasanga L.^1 ; Reichl, C.^2 ; Wegscheider, W.^2 ; Mani, R.G.^1

Dept. of Physics and Astronomy, Georgia State University, Atlanta

GA

30303, United States^1

ETH-Zurich, Zurich, Switzerland^2

关键词: 2D electron system;    Dual excitations;    Frequency combinations;    GaAs/AlGaAs;    High mobility;    Line shape;    Microwave-induced magnetoresistance oscillations;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012055/pdf
DOI  :  10.1088/1742-6596/864/1/012055

来源: IOP

【 摘 要 】

Microwave radiation-induced magneto-resistance oscillations are examined under bichromatic excitation for various frequency combinations in order to obtain a better understanding of the lineshape observed in the dual excitation experiment of the high mobility GaAs/AlGaAs 2D electron system. Here, we examine superposition- or lack thereof- in the lineshape observed in the bichromatic experiment, and report a trend observed between the monochromatic and bichromatic responses of the oscillatory diagonal resistance.