Implicit common-mode resonance by parasitic capacitances in LC oscillators for Ka-band satellite receiver

The Journal of Engineering

Seyed Hossein Alavi Lavasani¹  Ali Medi² 

[1] Iranian Research Organization for Science & Technology, IROST;Sharif University of Technology;

关键词: gallium arsenide;    indium compounds;    iii-v semiconductors;    aluminium compounds;    phase noise;    microwave oscillators;    lc circuits;    satellite communication;    radio receivers;    microwave field effect transistors;    size 0.25 mum;    frequency 19.25 ghz;    algaas-ingaas;    pseudomorphic high-electron-mobility transistors process;    phase noise performance;    circuit common mode resonator;    lc oscillator output signal quality;    ka-band satellite receiver;    ka-band satellite receiver oscillator;    parasitic capacitances;    implicit common-mode resonance;    higher oscillator fom;    twice the oscillation frequency;    differential lc oscillator;    tuned parasitic elements;    broadband frequency range;    specific precise frequency;   

DOI  :  10.1049/joe.2018.9428

来源: DOAJ

【 摘 要 】

Parasitic capacitances in high frequency have a significant role in examining the inductor-capacitor tank oscillators (LC oscillators) output signal quality. Here, the authors proposed a new idea for Ka-band satellite receiver oscillator, which considers these parasitic elements, in order to maintain a specific precise frequency where there is no need for a broadband frequency range. By using tuned parasitic elements in differential LC oscillator to resonate the circuit's common mode at twice the oscillation frequency, a better phase noise performance and higher oscillator FOM can be achieved. The developed methodology is employed to design and fabricate an oscillator in 0.25 µm AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors process for 19.25 GHz oscillations.

【 授权许可】

Unknown