Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN

Materials

ShubhraS. Pasayat¹  StevenP. DenBaars¹  UmeshK. Mishra¹  Shuji Nakamura¹  Stacia Keller¹  Chirag Gupta¹  Yifan Wang² 

[1] Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA;Department of Physics, University of California, Santa Barbara, CA 93106, USA;

关键词: indium gallium nitride;    gallium nitride;    porous gan;    relaxed ingan pseudo- substrate;    compliant pseudo-substrate;    composition pulling effect;    mocvd;   

DOI  :  10.3390/ma13010213

来源: DOAJ

【 摘 要 】

The compliant behavior of densely packed 10 × 10 µm² square patterned InGaN layers on top of porous GaN is demonstrated. The elastic relaxation of the InGaN layers is enabled by the low stiffness of the porous GaN under layer. High resolution X-ray diffraction measurements show that upon InGaN re-growths on these InGaN-on-porous GaN pseudo-substrates, not only was the regrown layer partially relaxed, but the degree of relaxation of the InGaN pseudo-substrate layer on top of the porous GaN also showed an increase in the a-lattice constant. Furthermore, methods to improve the surface morphology of the InGaN layers grown by metal-organic chemical vapor deposition (MOCVD) were explored in order to fabricate InGaN pseudo-substrates for future optoelectronic and electronic devices. The largest a-lattice constant demonstrated in this study using this improved method was 3.209 Å, corresponding to a fully relaxed InGaN film with an indium composition of 0.056.

【 授权许可】

Unknown