InGaN/GaN nanoLED Arrays as a Novel Illumination Source for Biomedical Imaging and Sensing Applications

Proceedings

Maur, Matthias Auf der¹  Bornemann, Steffen²  Gülink, Jan³  Spende, Hendrik⁴  Carlo, Aldo Di⁵ 

[1] Authors to whom correspondence should be addressed.;Department of Electronic Engineering, Universitá degli Studi di Roma “Tor Vergata”, I-00133 Rome, Italy;Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, D-38106 Braunschweig, Germany;MIND-IN2UB, Department Electronic and Biomedical Engineering, University of Barcelona, E-80124 Barcelona, Spain;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018

关键词: gallium nitride;    LED;    micro LED;    LED array;    nanofin;    hybrid etching;    illumination source;   

DOI  :  10.3390/proceedings2130892

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

Guidelines for the fabrication of nanoscale light-emitting diode arrays (i.e., nanoLED arrays) based on patterned gallium nitride (GaN) with very small dimensions and pitches have been derived in this work. Several challenges during top-down LED array processing have been tackled involving hybrid etching and polymer-based planarization to yield completely insulated highaspect-ratio LED fin structures and support the creation of p-GaN crossing line contacts, respectively. Furthermore, simulations of the light emission patterns were also performed providing hints for enhancing the device designs. As a result, regardless of the required device processing optimization, the developed nanoLED arrays are expected to offer high potential as novel illumination sources in biomedical imaging and sensing applications (e.g., mini compact microscopes and wearable biological/chemical nanoparticle counters)

【 授权许可】

CC BY