Characterization of Self-Heating Process in GaN-Based HEMTs

Electronics

Eliana Kamińska¹  Wojciech Wojtasiak²  Daniel Gryglewski²  Anna Piotrowska³ 

[1] Institute of High Pressure Physics Unipress, Al. Prymasa Tysiaclecia 98, 01-142 Warsaw, Poland;Institute of Radioelectronics and Multimedia Technology, Warsaw University of Technology, Nowowiejska 15/19, 00-662 Warsaw, Poland;Lukasiewicz Research Network—Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland;

关键词: GaN HEMT;    self-heating effect;    microwave power amplifier;    thermal impedance;    thermal time constant;    thermal equivalent circuit;   

DOI  :  10.3390/electronics9081305

来源: DOAJ

【 摘 要 】

Thermal characterization of modern microwave power transistors such as high electron-mobility transistors based on gallium nitride (GaN-based HEMTs) is a critical challenge for the development of high-performance new generation wireless communication systems (LTE-A, 5G) and advanced radars (active electronically scanned array (AESA)). This is especially true for systems operating with variable-envelope signals where accurate determination of self-heating effects resulting from strong- and fast-changing power dissipated inside transistor is crucial. In this work, we have developed an advanced measurement system based on DeltaV_GS method with implemented software enabling accurate determination of device channel temperature and thermal resistance. The methodology accounts for MIL-STD-750-3 standard but takes into account appropriate specific bias and timing conditions. Three types of GaN-based HEMTs were taken into consideration, namely commercially available GaN-on-SiC (CGH27015F and TGF2023-2-01) and GaN-on-Si (NPT2022) devices, as well as model GaN-on-GaN HEMT (T8). Their characteristics of thermal impedance, thermal time constants and thermal equivalent circuits were presented. Knowledge of thermal equivalent circuits and electro–thermal models can lead to improved design of GaN HEMT high-power amplifiers with account of instantaneous temperature variations for systems using variable-envelope signals. It can also expand their range of application.

【 授权许可】

Unknown