Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

Energies

Vaclav Smidl¹  Lubos Streit¹  HumphreyMokom Njawah Achiri¹  Zdenek Peroutka¹ 

[1] Regional Innovation Centre for Electrical Engineering, University of West Bohemia, 301 00 Plzeň 3, Czech Republic;

关键词: thermal impedance;    junction temperature;    foster network;    Cauer network;    least squares;   

DOI  :  10.3390/en13143749

来源: DOAJ

【 摘 要 】

State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under homogenous temperature distribution across the IGBT module. The junction temperature is recomputed from the established voltage–temperature relationship and used in determining the thermal impedance network. This method requires accurate measurement of voltage drop across the transistors and diodes under specific designed heating and cooling profiles. Validation of the junction temperature is usually done using infrared camera or sensors placed close to the transistors or diodes (in some cases and open IGBT module) so that the measured temperature is as close to the junction as possible. In this paper, we propose an alternative method for determining the IGBT thermal impedance network using the principles of least squares. This method uses measured temperatures for defined heating and cooling cycles under different cooling conditions to determine the thermal impedance network. The results from the proposed method are compared with those obtained using state-of-the-art methods.

【 授权许可】

Unknown