Characterization of Quanta Image Sensor Pump-Gate Jots With Deep Sub-Electron Read Noise

IEEE Journal of the Electron Devices Society

Jiaju Ma¹  Eric R. Fossum¹  Kofi Odame¹  Dakota Starkey¹  Arun Rao¹ 

[1] Thayer School of Engineering, Dartmouth College, Hanover, NH, USA;

关键词: CMOS Image Sensor;    Quanta Image Sensor;    Jot Device;    Photon Counting;    High Conversion Gain;    Low Read Noise;   

DOI  :  10.1109/JEDS.2015.2480767

来源: DOAJ

【 摘 要 】

Characterization of quanta image sensor pixels with deep sub-electron read noise is reported. Pixels with conversion gain of $423\mu \text{V}$ /e- and read noise as low as 0.22e- r.m.s. were measured. Dark current is 0.1e-/s at room temperature, and lag less than 0.1e-. This is one of the first works reporting detailed characterization of image sensor pixels with mean signals from sub-electron (0.25e-) to a few electrons level. Such pixels in a nearly-conventional CMOS image sensor process will allow realization of photon-counting image sensors for a variety of applications.

【 授权许可】

Unknown