期刊论文详细信息
IEEE Journal of the Electron Devices Society | |
Characterization of Quanta Image Sensor Pump-Gate Jots With Deep Sub-Electron Read Noise | |
Jiaju Ma1  Eric R. Fossum1  Kofi Odame1  Dakota Starkey1  Arun Rao1  | |
[1] Thayer School of Engineering, Dartmouth College, Hanover, NH, USA; | |
关键词: CMOS Image Sensor; Quanta Image Sensor; Jot Device; Photon Counting; High Conversion Gain; Low Read Noise; | |
DOI : 10.1109/JEDS.2015.2480767 | |
来源: DOAJ |
【 摘 要 】
Characterization of quanta image sensor pixels with deep sub-electron read noise is reported. Pixels with conversion gain of $423\mu \text{V}$ /e- and read noise as low as 0.22e- r.m.s. were measured. Dark current is 0.1e-/s at room temperature, and lag less than 0.1e-. This is one of the first works reporting detailed characterization of image sensor pixels with mean signals from sub-electron (0.25e-) to a few electrons level. Such pixels in a nearly-conventional CMOS image sensor process will allow realization of photon-counting image sensors for a variety of applications.
【 授权许可】
Unknown