A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

Sensors

Sylvain Feruglio²  Guo-Neng Lu¹  Patrick Garda² 

[1] Institut des Nanotechnologies de Lyon (INL), CNRS UMR5270, University Claude Bernard Lyon 1, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex, France E-mail:;University P. & M. Curie – Paris 6, SYEL – BC 252, 4 Place Jussieu, 75252 Paris Cedex 05, France E-mail:

关键词: Buried Double Junction photodetector;    CMOS Image Sensor;   

DOI  :  10.3390/s8106566

来源: mdpi

【 摘 要 】

A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications.

【 授权许可】

CC BY   
© 2008 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.