Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor

Engineering

关键词: insulated-gate bipolar transistor (IGBT);    high power density;    trench gate;    8-inch;    rail transportation;   

DOI  :  10.15302/J-ENG-2015043

来源: DOAJ

【 摘 要 】

Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch. The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system.

【 授权许可】

Unknown