High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Energies

Homer Alan Mantooth¹  Sayan Seal¹ 

[1] Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA;

关键词: wide bandgap;    power electronics;    high power density;    3D packaging;    wire bondless;   

DOI  :  10.3390/en10030341

来源: DOAJ

【 摘 要 】

This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed.

【 授权许可】

Unknown