Atomic layer deposited films of Al2O3 on fluorine-doped tin oxide electrodes: stability and barrier properties

Beilstein Journal of Nanotechnology

Michael Neumann-Spallart¹  Josef Krýsa¹  Ladislav Kavan²  Pavel Janda²  Hana Krýsová²  Hana Tarábková² 

[1] Department of Inorganic Technology, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic;J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic;

关键词: al2o3;    atomic layer deposition (ald);    barrier properties;    corrosion;    electrochemistry;    fto;   

DOI  :  10.3762/bjnano.12.2

来源: DOAJ

【 摘 要 】

Al2O3 layers were deposited onto electrodes by atomic layer deposition. Solubility and electron-transport blocking were tested. Films deposited onto fluorine-doped tin oxide (FTO, F:SnO2/glass) substrates blocked electron transfer to redox couples (ferricyanide/ferrocyanide) in aqueous media. However, these films were rapidly dissolved in 1 M NaOH (≈100 nm/h). The dissolution was slower in 1 M H2SO4 (1 nm/h) but after 24 h the blocking behaviour was entirely lost. The optimal stability was reached at pH 7.2 where no changes were found up to 24 h and even after 168 h of exposure the changes in the blocking behaviour were still minimal. This behaviour was also observed for protection against direct reduction of FTO.

【 授权许可】

Unknown