Atomic layer deposited films of Al 2 O 3 on fluorine-doped tin oxide electrodes: stability and barrier properties

Beilstein Journal of Nanotechnology

article

Hana Krýsová¹  Michael Neumann-Spallart²  Hana Tarábková¹  Pavel Janda¹  Ladislav Kavan¹  Josef Krýsa² 

[1] J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences;Department of Inorganic Technology, University of Chemistry and Technology Prague

关键词: Al2O3;    atomic layer deposition (ALD);    barrier properties;    corrosion;    electrochemistry;    FTO;   

DOI  :  10.3762/bjnano.12.2

学科分类：环境监测和分析

来源: Beilstein - Institut zur Foerderung der Chemischen Wissenschaften

【 摘 要 】

Al2O3 layers were deposited onto electrodes by atomic layer deposition. Solubility and electron-transport blocking were tested.Films deposited onto fluorine-doped tin oxide (FTO, F:SnO2/glass) substrates blocked electron transfer to redox couples (ferricyanide/ferrocyanide) in aqueous media. However, these films were rapidly dissolved in 1 M NaOH (≈100 nm/h). The dissolutionwas slower in 1 M H2SO4 (1 nm/h) but after 24 h the blocking behaviour was entirely lost. The optimal stability was reached atpH 7.2 where no changes were found up to 24 h and even after 168 h of exposure the changes in the blocking behaviour were stillminimal. This behaviour was also observed for protection against direct reduction of FTO.

【 授权许可】

CC BY