The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors

Nanomaterials

Takashi Uchino¹  John L. Hutchison²  C. H. de Groot³  Peter Ashburn³  David C. Smith⁴  Greg N. Ayre⁴ 

[1] Department of Electrical and Electronic Engineering, Tohoku Institute of Technology, Sendai 982-8577, Japan;Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK;School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK;School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, UK;

关键词: carbon nanotube;    field-effect transistors;    hydrogen annealing;    electron affinity;    bandgap;   

DOI  :  10.3390/nano11102481

来源: DOAJ

【 摘 要 】

We have systematically investigated the effects of hydrogen annealing on Ni- and Al-contacted carbon nanotube field-effect transistors (CNTFETs), whose work functions have not been affected by hydrogen annealing. Measured results show that the electronic properties of single-walled carbon nanotubes are modified by hydrogen adsorption. The Ni-contacted CNTFETs, which initially showed metallic behavior, changed their p-FET behavior with a high on-current over 10 µA after hydrogen annealing. The on-current of the as-made p-FETs is much improved after hydrogen annealing. The Al-contacted CNTFETs, which initially showed metallic behavior, showed unipolar p-FET behavior after hydrogen annealing. We analyzed the energy band diagrams of the CNTFETs to explain experimental results, finding that the electron affinity and the bandgap of single-walled carbon nanotubes changed after hydrogen annealing. These results are consistent with previously reported ab initio calculations.

【 授权许可】

Unknown